Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

TrendForce says that TSMC plans to repurpose its Hsinchu Fab 5, which handles GaN production, for advanced packaging.

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

To support the use of GaN in BMS applications, Innoscience has now introduced a portfolio of VGaN products, and BMS reference ...

Once emerged from the process, Wolfspeed says it expects to have reduced its overall debt by approximately 70 percent, representing a reduction of approximately $4.6 billion and a reduction of its ...

Company introduces portfolio of products and reference designs around 30V to 120V bi-directional GaN platform Battery Management Systems (BMS) are the central intelligence of modern energy storage, ...